Method for preparing phase shift mask blank, and phase mask

Details Method for preparing phase shift mask blank, and phase mask Method for preparing phase shift mask blank, and phase mask

1996-12-26

1998-12-15

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

428432, G03F 900

Patent

active

058494391

ABSTRACT:
A light semitransmittable film of a half tone type phase shift mask blank is formed from a thin film comprising a material including oxygen, nitrogen, silicon and a metal as main constitutional components. In this case, the above-mentioned thin film is formed on a transparent substrate by a reactive sputtering process using a mixed target of molybdenum and silicon. At this time, a mixed gas of an inert gas and nitrous oxide is allowed to flow as an atmosphere gas, and the flow rate of the nitrous oxide gas is controlled within the range of 25 sccm or less to adjust the flow rate, whereby transmittance and film thickness can be controlled.

REFERENCES:
patent: 5429897 (1995-07-01), Yoshioka et al.
patent: 5620815 (1997-04-01), Ito et al.

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