Method for preparing oxide piezoelectric material wafers

Abrasive tool making process – material – or composition – Impregnating or coating an abrasive tool

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

B24B 100

Patent

active

041540255

ABSTRACT:
A method for preparing oxide piezoelectric material wafers from a rhombohedral single crystal of an oxide piezoelectric material as-grown cylindrically in the X-axis direction includes linearly rubbing-off at least one side portion of such as-grown cylindrical single crystal facing to a specified direction along the longitudinal direction of such single crystal before cutting X-cut wafers from such single crystal thereby to provide a corresponding flat portion.

REFERENCES:
patent: 2487091 (1949-11-01), Barnes
patent: 3078549 (1963-02-01), Wende
Festkoreperprobleme XV, Advances in Solid State Physics, "Modern Silicon Technology," Hans Herrmann, et al., 1975.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for preparing oxide piezoelectric material wafers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for preparing oxide piezoelectric material wafers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for preparing oxide piezoelectric material wafers will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1091327

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.