Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2007-02-27
2007-02-27
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
C438S680000, C365S237000
Reexamination Certificate
active
11059530
ABSTRACT:
A large-size substrate having improved flatness is prepared by measuring the flatness of one surface or opposite surfaces of a large-size substrate having a diagonal length of at least 500 mm, and partially removing raised portions on the one surface or opposite surfaces of the substrate by means of a processing tool on the basis of the measured data. The processing tool is adapted to blast a slurry of microparticulates in water carried on compressed air against the substrate.
REFERENCES:
patent: 5484325 (1996-01-01), Shank
patent: 5975996 (1999-11-01), Settles
patent: 2003/0143403 (2003-07-01), Shibano et al.
patent: 1 333 313 (2003-08-01), None
patent: 2003-292346 (2003-10-01), None
Kusabiraki Daisuke
Shibano Yukio
Ueda Shuhei
Watabe Atsushi
Dang Phuc T.
Shin-Etsu Chemical Co. , Ltd.
LandOfFree
Method for preparing large-size substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for preparing large-size substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for preparing large-size substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3868780