Method for preparing homogeneous bridgman-type single crystals

Details Method for preparing homogeneous bridgman-type single crystals Method for preparing homogeneous bridgman-type single crystals

1995-12-01

1997-07-22

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

117 82, 117 83, 117200, 117206, C30B 1104

Patent

active

056500084

ABSTRACT:
Growth of homogeneous single crystals is carried out by a modified Bridgman-type process using a second melt of a different composition to replenish the first melt of a predetermined composition held in the crystal growth container. By controlling the replenishing rate and suppressing diffusion between the two melts, composition variations in the first melt and hence the growing crystal are compensated. The second melt may be maintained at a predetermined higher temperature than the first melt. The first melt may be agitated during crystal growth by rotation. A liquid encapsulant may be used.

REFERENCES:
patent: 3033660 (1962-05-01), Okkerse
patent: 4242307 (1980-12-01), Fally
patent: 5047113 (1991-09-01), Ostrogorsky
Ostrogorski et al. 1993 J. Crystal Growth, vol. 128, p. 201.

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