Method for preparing GaN based compound semiconductor crystal

Details Method for preparing GaN based compound semiconductor crystal Method for preparing GaN based compound semiconductor crystal

2005-04-05

2005-04-05

Kunemund, Robert (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S081000, C117S093000, C117S102000, C117S104000, C117S105000

Reexamination Certificate

active

06875272

ABSTRACT:
In a method for growing a GaN based compound semiconductor on a front surface of a substrate to obtain the GaN based compound semiconductor crystal in one body, because the gas for reducing and decomposing the substrate is supplied to the rear surface of the substrate and a heat treatment is carried out in a gas atmosphere in which the nitrogen partial pressure is not less than a predetermined value, in order to remove the substrate, it can be prevented that cracks are caused in the crystal, or fracture or warp is caused by causing strain of the GaN based compound semiconductor crystal in a cooling step.

REFERENCES:
patent: 6086673 (2000-07-01), Molnar
patent: WO 95027815 (1995-10-01), None
patent: 8-208385 (1996-08-01), None
patent: 9-208396 (1997-08-01), None
patent: 803594 (1997-10-01), None
patent: 2002-261026 (2002-09-01), None

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