Method for preparing digital storage device by laser application

Details Method for preparing digital storage device by laser application Method for preparing digital storage device by laser application

1982-09-30

1985-12-03

Thurlow, Jeffery

Plastic and nonmetallic article shaping or treating: processes

Optical article shaping or treating

Optical fiber, waveguide, or preform

219121LF, 264 14, 264 25, 264 28, 264104, 427 451, 427 531, B05D 306

Patent

active

045565244

ABSTRACT:
A digital storage device comprises a crystalline substrate such as silicon in which pockets of amorphous substrate material represent one of the binary logic states; the absence of amorphous material represents the other logic state. The amorphous material is formed by irradiation with a laser beam. Typically the radiation for silicon is at 347 nanometers, 2.5 nanosecond pulse length. The power density varies with crystalline orientation; for (001) silicon it is typically 0.3 J/cm.sup.2 and for (111) silicon it is 0.3 to 0.6 J/cm.sup.2. Erasure of the information is achieved by laser annealing the amorphous material back to its crystalline form.

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patent: 4439245 (1984-03-01), Wu
"Improvement of Crystalline Quality of SOS with Laser Irradiation Techniques", Japanese Journal of Applied Physics, (pp. L249-L252) (4/1981) vol. 20, No. 4.
"Unique Semiconductor Materials and Structures Produced by Lasers and Electron Beams", J. Vac. Sci. Technol., 20(3) Mar. 1980.
"Polysilicon Transistor on Glass by Pulsed-Laser Annealing", J. Appl. Phys., 53(5) May, 1982, pp. 3897-3899.

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