Method for preparing compound semiconductor crystal

Details Method for preparing compound semiconductor crystal Method for preparing compound semiconductor crystal

1995-03-09

1996-12-17

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

127 54, 127900, C30B 1104

Patent

active

055849296

ABSTRACT:
A method of preparing a compound semiconductor crystal in a crucible involves first forming a boron or boron compound containing layer on an inner surface of the crucible and heat treating the same to form a B.sub.2 O.sub.3 containing layer. The resulting pretreated crucible is the employed for preparing the compound semiconductor crystal. By pretreating the crucible in this manner, it is possible to previously form a homogenous B.sub.2 O.sub.3 film on the crucible interior surface while preventing incomplete and heterogeneous coating of the B.sub.2 O.sub.3 film. Consequently, it is possible to prevent a raw material melt from wetting the crucible interior surface and thus to suppress polycrystallization, thereby preparing a compound semiconductor single crystal with an excellent yield.

REFERENCES:
patent: 3734817 (1973-05-01), Bienert et al.
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patent: 5131975 (1992-07-01), Bournet-Courchesne
G. Ajithkumar et al., "A Crystal Growth System with modified pulling arrangement and temperature controller", 8056 Measurement Sci. & Tech. 5 (1994) Aug., No. 8, pp. 1018-1020.

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