Method for preparing composite or elementary semi-conducting pol

Coating processes – Electrical product produced – Welding electrode

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156DIG80, 427 86, B05D 512

Patent

active

044630280

ABSTRACT:
There is described a method for preparing polycrystalline semi-conducting films comprised of two elements respectively from Groups III and V, or Groups II and VI of the Periodic Table, by irradiating with a laser beam a film which is comprised of at least two layers from elements selected with a stoichiometric ratio, said film being deposited over a non-crystalline substrate and being coated with a protective layer, which method is comprised of irradiating said film with a structured laser beam to cause crystallizing into crystallites which are regularly aligned and with a size at least equal to the thickness of the resulting film.

REFERENCES:
patent: 3585088 (1971-06-01), Schwuttke et al.
patent: 4059461 (1977-11-01), Fan et al.
patent: 4212900 (1980-07-01), Serlin
Andrew et al., "Laser-Induced Metal-to-Semiconductor Phase Transition in Mixed Al-Sb Films", Applied Physics, vol. 35, No. 5, Sep. 1, 1979, pp. 418-420.
Fan et al., "Solid-Phase Growth of Large Aligned Grains During Scanned Laser Crystallization of Amorphous Ge Films on Fused Silica", Applied Physics, vol. 36, No. 2, Jan. 15, 1980, pp. 158-161.
Vitali et al., "Laser Induced Single-Crystal Transition in Polycrystalline Silicon", Applied Physics, vol. 17, No. 1, Sep. 1978, pp. 111-113.
Tsu et al., "Laser-Induced Recrystallization and Damage in GaAs", Applied Physics, vol. 34, No. 2, Jan. 15, 1979, pp. 153-155.
WO/80/00510 (Philips Patentverwaltung).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for preparing composite or elementary semi-conducting pol does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for preparing composite or elementary semi-conducting pol, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for preparing composite or elementary semi-conducting pol will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-185593

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.