Method for preparing chalcopyrite-type compound

Details Method for preparing chalcopyrite-type compound Method for preparing chalcopyrite-type compound

1994-05-27

1995-08-29

Beck, Shrive

Coating processes

Electrical product produced

Photoelectric

427 76, 4272481, 4272552, 423508, 423511, B05D 136

Patent

active

054458471

ABSTRACT:
A chalcopyrite-type compound, for instance, CuInS.sub.2 or CuGaS.sub.2, is prepared by subjecting a Group I-III oxide composition, containing at least one of the Group Ib element, for instance copper (Cu), and at least one of the Group IIIb element, for instance indium (In) or gallium (Ga) to a heat treatment under a reducing atmosphere containing the Group VIb element, for instance sulfur (S) or selenium (Se), or under an atmosphere containing a reducing compound of the Group VIb element, thereby converting said oxide composition into a chalcopyrite-type compound.

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A. Rockett et al, "CulnSe2 for Photovoltaic applications", Journal of Applied Physics, Oct. 1991, pp. 81-97.
S. Moorthy Babu et al, "Thin Film Deposition and Characterization of CulnSe2", Thin Solid Films, Mar. 1991, pp. 268-270.
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Basol et al, "Deposition of CulnSe2, Films by a Two-Stage Process Utilizing E-Beam Evaporation", IEEE Transactions on Electron Devices, vol. 37, No. 2, Feb. 1990, pp. 418-421.
Knowles et al, "Thin films of CulnSe2 Produced by a Solid State Reaction from Stacked Elemental Layers", Semicond. Sci. Technol. 3, (1988), pp. 1143-1144.
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