Method for preparing atomistically straight boundary...

Details Method for preparing atomistically straight boundary... Method for preparing atomistically straight boundary...

2008-01-22

2008-01-22

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S043000, C117S089000, C438S481000, C257S031000, C257SE39014

Reexamination Certificate

active

07320732

ABSTRACT:
A method for preparing film oxides deposited on a substrate with a resulting grain boundary junction that is atomistically straight. A bicrystal substrate having a straight grain boundary is prepared as a template. The Miller indices h1, k1, h2, k2 of the two grains of the substrate are chosen such that the misorientation angle of the film is equal to arctan k1/h1+arctan k2/h2. The film is grown on the substrate using a layer-by-layer growth mode.

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