Method for preparing an oxide crystal

Details Method for preparing an oxide crystal Method for preparing an oxide crystal

1995-12-08

1998-01-13

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 15, 117201, C30B 1520

Patent

active

057074410

ABSTRACT:
In order to prepare a large yttrium or lanthanoid based oxide superconductor crystal of higher quality, a method and an apparatus which can stably control the shape of a pulled crystal and stably maintain growth of the crystal from a melt are provided. A crystal of an oxide having a structure of RBa.sub.2 Cu.sub.3 O.sub.7-X (R: yttrium or lanthanoid element, 0.ltoreq.X.ltoreq.1) is pulled from a raw material melt which is stored in a crucible by a rotary crystal pulling shaft. During such pulling, a position of the surface of the raw material melt is measured with time to obtain a lowering speed of the surface in a direction substantially parallel to the crystal pulling direction, for adjusting the lifting speed of the crystal pulling shaft by this lowering speed.

REFERENCES:
patent: 5240684 (1993-08-01), Baba et al.
patent: 5485803 (1996-01-01), Habu
K. Watanabe, "An approach to the growth of YBa.sub.2 Cu.sub.3 O.sub.7-x single crystals by the flux method. II", Journal of Crystal Growth, 1991, vol. 114, pp. 269-278.
Elizabeth et al., "Growth and extraction of flux free YBCO crystals", Journal of Crystal Growth, 1992, vol. 121, pp. 531-535.
Yamada et al., "Continuous Crystal Growth of Y123 by the Modified Top-Seeded Solution Growth" and related articles, 54th Oyo Butsuri Gakkai Gakujutsu Koenkai, 1993, 29-p-ZK-7.
Yamada et al., "Continuous crystal growth of YBa.sub.2 Cu.sub.3 O.sub.7-x by the modified top-seeded crystal pulling method", Physica, C 217, 1993, pp. 182-188.
Goriletsky et al., "Automated Pulling of Large Alkali Halide Single Crystals", Journal of Crystal Growth (1981) 509-513, from Proceedings of the Sixth International Conference on Crystal Growth, Moscow, USSR, Sep. 10-16, 1980.
Eidelman et al., "Automated Growing of Large Single Crystals Controlled by Melt Level Sensor", Crystal Research and Technology vol. 20 No. 2 (1985) 167-172, East Germany.
Sen et al., "Creep of CuO-BaO Melts Along the Container Wall", Materials Letters, vol. 7 No. 12 (Mar. 1989) 433-436.

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