Method for preparing aluminum nitride and its sinter

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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423412, 428209, 428901, 501 96, B05D 512, C04B 3558, C01B 21072

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048699250

ABSTRACT:
A method for preparing high-purity aluminum nitride having high thermal conductivity and heat resistance for aluminum nitride substrates, which comprises the steps of reacting an organic aluminum compound with an aminotriazine in a solvent to obtain an aluminum nitride precursor, separating the precursor from the solvent, and heating the precursor at a temperature of 600.degree. C. or more in a reducing atmosphere and/or a non-oxidizing atmosphere. An aluminum nitride sinter is prepared by, if necessary, adding a sintering auxiliary to the above aluminum nitride powder, molding the powder into a desired shape, and then sintering the molded material at a temperature of 1,600.degree. to 2,000.degree. C. in a non-oxidizing atmosphere.

REFERENCES:
patent: 4783430 (1988-11-01), Su
Interrante et al, "Studies of Organometallic Precursors to Aluminum Nitride", Mat. Res. Soc. Symp. Proc., vol. 73, 1986, Materials Research Society, pp. 359-366.

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