Method for preparing a protective amorphous silicon passivating

Details Method for preparing a protective amorphous silicon passivating Method for preparing a protective amorphous silicon passivating

1981-07-01

1982-12-07

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

357 52, 427 85, 427 86, 427 95, H01L 21314

Patent

active

043627668

ABSTRACT:
In the present invention a process is provided for depositing a protective passivating film of doped or undoped amorphous silicon on a body of semiconductor material. In the process a body of semiconductor material is disposed within a reaction vessel, a silicon-hydrogen gaseous compound is fed into the reaction vessel and decomposed by means of a glow discharge. The decomposition of the silicon-hydrogen gas mixture results in the deposition of amorphous silicon on the semiconductor body.

REFERENCES:
patent: 3473959 (1969-10-01), Ehinger et al.
patent: 3798062 (1974-03-01), Maoczeck et al.
patent: 4064521 (1977-12-01), Carlson
patent: 4066037 (1978-01-01), Jacob
patent: 4069492 (1978-01-01), Pankove et al.
patent: 4084986 (1978-04-01), Aoki et al.
patent: 4134125 (1979-01-01), Adams et al.
patent: 4142195 (1979-02-01), Carlson et al.
patent: 4151058 (1979-04-01), Kaplan et al.
patent: 4176372 (1979-11-01), Matsushita et al.
patent: 4177473 (1979-12-01), Ovshinsky
patent: 4177474 (1979-12-01), Ovshinsky
patent: 4226898 (1980-10-01), Ovshinsky
patent: 4289797 (1981-09-01), Akselrad
Brodsky et al., "Hydrogenation and Doping of Amorphous GaAs . . . ", IBM TDB 20, No. 11B, Apr. 1, 1978.
Spear et al., "Amorphous Silicon p-n Junction", Applied Physics Letters, 28, No. 2, Jan. 1976, p. 105.
Spear et al., "Substitutional Doping of Amorphous Silicon", Solid State Communications, 17, pp. 1193-1196, 1975.
Fuhs et al., "Heterojunctions of Amorphous Silicon . . . ", Int. Conf. on Tetrahedral Bonded Amorphous Semiconductors, Yorktown Ht, NJ., Mar. 20, 1974.

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