Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Patent
1995-11-27
1997-04-15
Garrett, Felisa C.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
117 87, 117921, C30B 2800
Patent
active
056205112
ABSTRACT:
Disclosed in this invention is a method of preparing a whisker-preform comprising the steps of (a) uniformly dispersing a mixture of silicon microparticles and carbon fibers in the ratio of 4:1 to 8:1 into aluminium alkoxide solution; (b) filtering the dispersion obtained in step (a), dehydrating the filtered material, forming and drying the dehydrated material; and (c) heating the material dried in step (b) at a temperature in the range of 300.degree. to 400.degree. C.
REFERENCES:
patent: Re34861 (1995-02-01), Davis et al.
patent: 4873069 (1989-10-01), Weaver et al.
patent: 4911781 (1990-03-01), Fox et al.
Chung Bumgoo
Kim Junsu
Garrett Felisa C.
Hyundai Motor Company
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