Method for preparing a dummy wafer

Details Method for preparing a dummy wafer Method for preparing a dummy wafer

1998-12-04

2000-09-19

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438225, 438297, 438362, 438439, H01L 2176

Patent

active

061211141

ABSTRACT:
The method of the invention starts with forming a mask on a blank wafer, wherein the mask contains a number of openings that expose a portion of the wafer. By performing a wet oxidation process, field oxide is formed on the exposed surface of the wafer. The wafer surface is then become ragged after the mask and the field oxide are removed. In order to further increase the surface area of a dummy wafer, an etching process is performed on the ragged surface after a hemispherical grained layer is formed on the ragged surface.

REFERENCES:
patent: 5910018 (1999-06-01), Jang
patent: 6027970 (2000-02-01), Sharan et al.
patent: 6033969 (2000-03-01), Yoo et al.
patent: 6046083 (2000-04-01), Lin et al.

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