Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2006-07-04
2006-07-04
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S974000, C257SE21122
Reexamination Certificate
active
07071077
ABSTRACT:
A method for preparing a bonding surface of a semiconductor layer of a wafer is described. The method includes treating the bonding surface to oxidize contaminants, and then cleaning the bonding surface to remove essentially all remaining contaminants. Ozone is then used to oxidize the bonding surface to improve the hydrophilic properties of the bonding surface. In an implementation, two wafers are prepared and then bonded together to form a structure.
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Maleville Christophe
Maunand Tussot Corinne
Isaac Stanetta
Lebentritt Michael
S.O.I.Tec Silicon on Insulator Technologies S.A.
Winston & Strawn LLP
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