Method for preparation of mask for ion beam lithography

Details Method for preparation of mask for ion beam lithography Method for preparation of mask for ion beam lithography

1994-04-04

1996-10-22

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430296, 430313, 430394, 430396, 216 12, G03F 900

Patent

active

055675514

ABSTRACT:
A mask for ion beam lithography is made by coating a front side, sidewalls, nd a backside of a substrate with an insulating layer; opening, on the front side of the substrate, a window in the insulating layer to expose a front substrate surface; depositing an oxide membrane on the front substrate surface; opening a portion of the insulating material on the backside of the substrate to form an exposed backside of the substrate; forming a photoresist layer on the oxide membrane; patterning the photoresist layer; ion beam etching the oxide membrane through the patterned photoresist layer to completely remove selected portions of the oxide membrane and form a stenciled pattern in the oxide membrane; removing the patterned photoresist layer from the stenciled oxide membrane; removing, from the backside of the substrate, the exposed backside of the substrate to expose a backside of the stenciled pattern in the oxide membrane, thus leaving a stenciled oxide membrane, corresponding to the stenciled oxide pattern, held within a frame formed by remaining portions of the substrate. The stenciled oxide membrane is capable of being supported entirely by the frame.

REFERENCES:
patent: 4022927 (1977-05-01), Pfeiffer et al.
patent: 4101782 (1978-07-01), Seliger
patent: 5057388 (1991-10-01), Yahalom
patent: 5096791 (1992-03-01), Yahalom

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