Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate
2008-07-15
2008-07-15
Kunemund, Robert M (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
C117S090000, C117S095000, C117S096000, C117S932000
Reexamination Certificate
active
10539883
ABSTRACT:
A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric and electronic parts and devices is prepared by forming an electrode layer having a perovskite crystal structure on a substrate made of a silicon or ferroelectric single crystal optionally polished to have a off-axis crystal structure, and epitaxially growing a layer of a ferroelectric single crystal thereon by pulsed laser deposition (PLD) or metallorganic chemical vapor deposition (MOCVD).
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Eun Jaehwan
Kim Hyeongjoon
Kim Minchan
Lee Sang-Goo
Baker & Hostetler LLP
Ibule Photonics Inc.
Kunemund Robert M
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