Method for preparation of anisotropic materials

Stock material or miscellaneous articles – Liquid crystal optical display having layer of specified... – Alignment layer of specified composition

Reexamination Certificate

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C428S001310, C428S345000, C528S087000, C528S098000, C528S100000, C528S104000, C528S110000

Reexamination Certificate

active

07390540

ABSTRACT:
Various embodiments of the present invention are directed to methods for manufacturing complex, anisotropic materials with desirable properties for information storage, processing, and display. Certain of these methods involve employing a magnetic field during manufacture to induce desired orientations of precursors, subunits, and/or molecular subassemblies. The applied magnetic field steers the precursors, subunits, and/or molecular subassemblies into desirable orientations while the precursors, subunits, and/or molecular subassemblies are assembled or self-assemble into a complex, anisotropic material. One embodiment of the present invention is a class of new, complex, well-ordered, network-like materials that include a ferromagnetic-material-based framework in which organic and/or organometallic compounds are organized. The ferromagnetic-molecule-based framework provides a scaffold for assembling the stable, precisely separated layers of organic and/or organometallic compounds and maintaining the layers of organic and/or organometallic compounds in well-ordered, anisotropic arrangements. Additional embodiments of the present invention are directed to methods for manufacturing the new ferromagnetic-molecule-based, network-like materials.

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patent: 4983479 (1991-01-01), Broer et al.
patent: 5178710 (1993-01-01), Hikmet et al.
patent: 6613246 (2003-09-01), Takeuchi et al.
patent: 7091412 (2006-08-01), Wang et al.
patent: 0331233 (1989-09-01), None
patent: WO 01/37360 (2001-05-01), None
Kornilovitch—“Molecular Electronics and Resistance of Molecule-Metal Interface”—The Institution of Electrical Engineers—2003.
Wang et al—“Electrical Characteristics of Metal-Molecule-Silicon Junctions”—The Institution of Electrical Engineers—2003.

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