Method for predicting the three-dimensional topography of surfac

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364489, 364490, 364578, G01B 2120, G06F 1710, G06T 1720

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054714036

ABSTRACT:
A method of predicting the three-dimensional topography of a surface of a semiconductor device including a flowable material includes establishing reflow process conditions including a total process time; establishing a grid of three-dimensional cells encompassing at least part of a semiconductor device and including a flowable material; specifying the concentration of a flowable material in each cell; establishing polygonal surfaces of constant flowable material concentration that extend amongst the cells; calculating the chemical potential of each constant concentration polygonal surface; calculating the surface flux of flowable material between adjacent polygonal surfaces; calculating the material flow between cells for a time interval .increment.t less than the process time by multiplying the surface flux by the time .increment.t; determining the flowable material concentration in each cell after the material flow; repeating the foregoing steps from establishing the polygonal surfaces of constant concentration through determining the flowable material concentration in each cell for successive time intervals .increment.t until the sum of the time intervals reaches the specified process time; and, thereafter, establishing as the three-dimensional surface of the flowable material a surface of constant concentration of the flowable material.

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