Data processing: structural design – modeling – simulation – and em – Simulating nonelectrical device or system
Reexamination Certificate
2006-09-29
2011-10-11
Rodriguez, Paul (Department: 2123)
Data processing: structural design, modeling, simulation, and em
Simulating nonelectrical device or system
C703S012000
Reexamination Certificate
active
08036864
ABSTRACT:
A method for predicting the formation of silicon nanocrystals in an oxide matrix is disclosed. Initially, fundamental data for a set of microscopic processes that can occur during one or more material processing operations are obtained. Kinetic models are then built by utilizing the fundamental data for a set of reactions that can contribute substantially to the formation of silicon nanocrystals in a silicon oxide matrix. Finally, the kinetic models are applied to predict shape, size distribution, spatial arrangements of silicon nanocrystals.
REFERENCES:
patent: 2002/0188373 (2002-12-01), Goddard et al.
Hamann, Energetics of silicon suboxides, The American Physical Society, vol. 61 No. 15, pp. 9899-9901.
Bongiorno et al., Validity of the bond-energy picture for the energetics at Si-SiO2 interfaces, The American Physical Society, vol. 62 No. 24, pp. 326-329.
Ng et al., Structure adn Oxidatio kinetics of teh Si(100)-SiO2 interface, Apr. 15, 1999, vol. 59, No. 15, pp. 132-137.
Muller et al., Size and location control of Si nanocrystals at ion beam su=ynthesis in thin SiO2 films, Oct. 14, 2002, Applied Physics Letters, vol. 81 No. 16, pp. 3049-3051.
Kanemitsu, Y. et al., “Visible photoluminescence from oxidized Si nanometer-sized spheres: Exciton confinement on a spherical shell,” Physical Review B, Aug. 15, 1993, pp. 4883-4887, vol. 48, No. 7.
Kimberling, L. C. et al., “Monolithic Silicon Microphotonics,” Topics in Applied Physics, 2004, pp. 89-121, vol. 94.
Pavesi, L. et al., “Optical gain in silicon nanocrystals,” Nature, Nov. 23, 2000, pp. 440-444, vol. 408.
Pellegrino, P. et al., “Low-loss rib waveguides containing Si nanocrystals embedded in SiO2,” Journal of Applied Physics, Mar. 25, 2005, pp. 074312-1 to 074312-8, vol. 97.
Rong, H. et al., “A continuous-wave Raman silicon laser,” Nature, Feb. 17, 2005, pp. 725-728, vol. 433.
Tiwari, S. et al., “Single charge and confinement effects in nano-crystal memories,” Applied Physics Letters, Aug. 26, 1996, pp. 1232-1234, vol. 69, No. 9.
Walters, R. J. et al., “Silicon optical nanocrystal memory,” Applied Physics Letters, Sep. 27, 2004, pp. 2622-2624, vol. 85, No. 13.
Wilson, W. L. et al., “Quantum Confinment in Size-Selected, Surface-Oxidized Silicon Nanocrystals,” Science, Nov. 19, 1993, pp. 1242-1244, vol. 262, No. 5137.
Fernandez, B. G. et al., “Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO2,” Journal of Applied Physics, Jan. 15, 2002, pp. 798-807, vol. 91, No. 2.
Ghislotti, G. et al., “Effect of different preparation conditions on light emission from silicon implanted SiO2 layers,” Journal of Applied Physics, Jun. 1, 1996, pp. 8660-8663, vol. 79, No. 11.
Muller, T. et al., “Size and location control of Si nanocrystals at ion beam synthesis in thin SiO2 films,” Applied Physics Letters, Oct. 14, 2002, pp. 3049-3051, vol. 81, No. 16.
Shimizu-Iwayama, T. et al., “Optical properties of silicon nanoclusters fabricated by ion implantation,” Journal of Applied Physics, Jun. 1, 1998, pp. 6018-6022, vol. 83, No. 11.
Skorupa, W. et al., “Room-temperature, short-wavelength (400-500 nm) photoluminescence from silicon-implanted silicon dioxide films,” Applied Physics Letters, Apr. 22, 1996, pp. 2410-2412, vol. 68, No. 17.
Yu, D. et al., “Structure and diffusion of excess Si atoms in SiO2,” Physical Review B, Nov. 14, 2005, pp. 205204-1 to 205204-5, vol. 72.
Brunet-Bruneau, A. et al. “Microstructural characterization of ion assisted SiO2 thin films by visible and infrared ellipsometry,” Journal of Vacuum Science and Technology A, Jul. 1998, pp. 2281-2286, vol. 16, No. 4.
Laaziri, K. et al., “High-energy x-ray diffraction study of pure amorphous silicon,” Physical Review B, Nov. 15, 1999, pp. 13 520 to 13 533, vol. 60, No. 19.
Tu, Y. et al., “Structure and Energetics of the Si-SiO2 Interface,” Physical Review Letters, May 8, 2000, pp. 4393-4396, vol. 84, No. 19.
Wooten, F., “Computer Generation of Structural Models of Amorphous Si and Ge,” Physical Review Letters, Apr. 1, 1985, pp. 1392-1395, vol. 54, No. 13.
Kresse, G. et al., “Vienna Ab-Initio Simulation Package (VASP): VASP the Guide,” University of Vienna, Vienna, Austria, 2001, available at http://cms.mpi.univie.ac.at/vasp/vasp/vasp.html.
Monkhorst, H. J. et al., “Special points for Brillouin-zone integrations,” Physical Review B, Jun. 15, 1976, pp. 5188-5192, vol. 13, No. 12.
Perdew, J. P. et al., “Accurate and simple analytic representation of the electron-gas correlation energy,” Physical Review B, Jun. 15, 1992, pp. 13 244 to 13 249, vol. 45, No. 23.
Vanderbilt, D., “Soft self-consistent pseudopotentials in a generalized eigenvalue formalism,” Physical Review B, Apr. 15, 1990, pp. 7892-7895, vol. 41, No. 11.
Bongiorno, A. et al., “Validity of the bond-energy picture for the energetics at Si-SiO2 interfaces,” Physical Review B, Dec. 15, 2000, pp. 16 326 to 16 329, vol. 62, No. 24.
Hamann, D. R., “Energetics of silicon suboxides,” Physical Review B, Apr. 15, 2000, pp. 9899-9901, vol. 61, No. 15.
Tsoukalas, D. et al., “Diffusivity measurements of silicon in silicon dioxide layers using isotopically pure material,” Journal of Applied Physics, Jun. 15, 2001, pp. 7809-7813, vol. 89, No. 12.
Henkelman, G. et al., “A climbing image nudged elastic band method for finding saddle points and minimum energy paths,” Journal of Chemical Physics, Dec. 8, 2000, pp. 9901-9904, vol. 113, No. 22.
Mills, G. et al., “Quantum and Thermal Effects in H2 Dissociative Adsorption: Evaluation of Free Energy Barriers in Multidimensional Quantum Systems,” Feb. 14, 1994, pp. 1124-1128, vol. 72, No. 7.
Kirichenko, T. A. et al., “Silicon interstitials at Si/SiO2 interfaces: Density functional calculations,” Physical Review B, Jul. 29, 2005, pp. 035345-1 to 035345-6, vol. 72, No. 3.
Taniguchi, K. et al., “Theoretical model for self-interstitial generation at the Si/SiO2 interface during thermal oxidation of silicon,” Journal of Applied Physics, Apr. 1, 1989, pp. 2723-2727, vol. 65, No. 7.
Mikkelsen, J. C., “Self-diffusivity of network oxygen in vitreous SiO2,” Applied Physics Letters, Dec. 1, 1984, pp. 1187-1189, vol. 45, No. 11.
Hwang Gyeong S.
Yu Decai
Cothran Bernard E
Rodriguez Paul
Schwabe Williamson & Wyatt P.C.
The Board of Regents The University of Texas System
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