Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...
Reexamination Certificate
2006-07-11
2006-07-11
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step of heat treating...
C117S004000, C117S019000, C117S055000, C117S085000, C117S089000
Reexamination Certificate
active
07074270
ABSTRACT:
Techniques for predicting the behavior of dopant and defect components in a substrate lattice formed from a substrate material can be implemented in hardware or software. Fundamental data for a set of microscopic processes that can occur during one or more material processing operations is obtained. Such data can include data representing the kinetics of processes in the set of microscopic processes and the energetics and structure of possible states in the material processing operations. From the fundamental data and a set of external conditions, distributions of dopant and defect components in the substrate lattice are predicted. The distributions of one or more fast components are each predicted by calculating the concentration of the particular fast component for a time period before that fast component reaches its pseudo steady state by solving a first relationship and calculating the concentration of that fast component after the time period by solving a second relationship based on other components, the pseudo steady state of a fast component being a state in which the concentration of that fast component is determined by concentrations of other components. The distribution of Bs3Bi, in addition to the distributions of Bs, BsI, BsI2, BsI3, BsBi, BsBi2, BsBi3, BsBiI, BsBiI2, Bs2Bi, Bs2Bi2, I and In, are calculated by solving the first relationship to predict the distribution of boron after annealing, where Bs and Bi represent substitutional boron and interstitial boron, respectively, and I and Inrepresent interstitial silicon and a cluster of n I's, respectively.
REFERENCES:
patent: 2002/0188373 (2002-12-01), Goddard, III et al.
“A simple continuum model for boron clustering based on atomistic calculations,” S. Chakravarthi, et al., Journal of Applied Physics, vol. 89, No. 7, Apr. 1, 2001, pp. 3650-3655.
Goddard, III William A.
Hwang Gyeong S.
Sato Yuzuru
Uehara Masamitsu
California Institute of Technology
Gabrik Michael T.
Kunemund Robert
Seiko Epson Corporation
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