Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
Patent
1997-03-28
1998-06-16
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step acting on the...
117 3, 117948, C30B 2930
Patent
active
057663408
ABSTRACT:
A method for poling a ferroelectric crystal includes heating the crystal to a temperature above its Curie temperature and applying a first selected voltage to the electrodes to apply an electric field to the crystal. The temperature of the crystal is then reduced to a temperature below the Curie temperature of the crystal, and a second electric field having polarity opposite to the polarity of the first electric field is applied to the crystal. Application of the second electric field reduces nonuniformity in ion concentration across the crystal.
REFERENCES:
patent: 5422873 (1995-06-01), Kewitsch et al.
patent: 5477807 (1995-12-01), Yamada et al.
patent: 5519802 (1996-05-01), Field et al.
Kunemund Robert
Litton Systems Inc.
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