Method for polymer residue removal following metal etching

Details Method for polymer residue removal following metal etching Method for polymer residue removal following metal etching

2007-03-20

2007-03-20

Kornakov, M. (Department: 1746)

Cleaning and liquid contact with solids

Processes

Using sequentially applied treating agents

C134S003000, C134S026000, C134S028000, C216S096000, C216S100000, C216S103000, C216S108000, C438S906000

Reexamination Certificate

active

10428509

ABSTRACT:
A method for removing polymer containing residues from a semiconductor wafer including metal containing features including providing a semiconductor wafer having a process surface including metal containing features said process surface at least partially covered with polymer containing residues; and, subjecting the semiconductor wafer to a series of cleaning steps including sequentially exposing the process surface to at least one primary solvent and at least one intermediate solvent the at least one intermediate solvent comprising an ammonium nitrate containing solution.

REFERENCES:
patent: 4298786 (1981-11-01), Marciniec
patent: 6367486 (2002-04-01), Lee et al.
patent: 2002/0162578 (2002-11-01), Ma et al.

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