Method for polishing a substrate surface

Semiconductor device manufacturing: process – Chemical etching

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S690000, C438S691000, C438S692000, C438S693000

Reexamination Certificate

active

11363816

ABSTRACT:
According to one aspect of the invention, an improved process for preparing a surface of substrate is provided wherein the surface of the substrate is prepared for a chemical mechanical polishing (CMP) process, the CMP process is performed on the surface of the substrate, and the surface of the substrate is finished to clear the substrate surface of any active ingredients from the CMP process. Also, an improved substrate produced by the method is provided. According to one aspect of the invention, particular polishing materials and procedures may be used that allow for increased quality of AlN substrate surfaces.

REFERENCES:
patent: 3629023 (1971-12-01), Strehlow
patent: 5478436 (1995-12-01), Winebarger et al.
patent: 5578523 (1996-11-01), Fiordalice et al.
patent: 5597443 (1997-01-01), Hempel
patent: 5645682 (1997-07-01), Skrovan
patent: 5677231 (1997-10-01), Maniar et al.
patent: 5876508 (1999-03-01), Wu et al.
patent: 6063306 (2000-05-01), Kaufman et al.
patent: 6291351 (2001-09-01), Li et al.
patent: 6521535 (2003-02-01), Sabia
patent: 0 684 106 (1995-11-01), None
patent: 0 822 164 (1998-02-01), None
patent: 1 041 129 (2000-10-01), None
patent: 1 103 346 (2001-05-01), None
patent: WO 01/58644 (2001-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for polishing a substrate surface does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for polishing a substrate surface, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for polishing a substrate surface will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3922106

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.