Method for polishing a substrate surface

Semiconductor device manufacturing: process – Chemical etching

Reexamination Certificate

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Details

C438S690000, C438S691000, C438S692000, C438S693000

Reexamination Certificate

active

07323414

ABSTRACT:
According to one aspect of the invention, an improved process for preparing a surface of substrate is provided wherein the surface of the substrate is prepared for a chemical mechanical polishing (CMP) process, the CMP process is performed on the surface of the substrate, and the surface of the substrate is finished to clear the substrate surface of any active ingredients from the CMP process. Also, an improved substrate produced by the method is provided. According to one aspect of the invention, particular polishing materials and procedures may be used that allow for increased quality of AlN substrate surfaces.

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patent: 0 822 164 (1998-02-01), None
patent: 1 041 129 (2000-10-01), None
patent: 1 103 346 (2001-05-01), None
patent: WO 01/58644 (2001-08-01), None

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