Method for plasma treatment

Details Method for plasma treatment Method for plasma treatment

2006-10-03

2006-10-03

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S723000

Reexamination Certificate

active

07115519

ABSTRACT:
A method for plasma treatment etches an SiC layer with an increased etching rate and enhanced selectivities of SiC with respect to SiO2and an organic layer. An etching gas is converted into plasma to etch SiC. The etching gas may include CHF3; CHF3and N2, for example, a mixed gas of CHF3, N2and Ar; or a material having C, H and F and a material having N but without any material having O.

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