Method for plasma processing over wide pressure range

Details Method for plasma processing over wide pressure range Method for plasma processing over wide pressure range

2011-01-25

2011-01-25

Vinh, Lan (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C156S345300, C216S067000

Reexamination Certificate

active

07875555

ABSTRACT:
A method for treating a substrate with plasma over a wide pressure range is described. The method comprises exposing the substrate to a low pressure plasma in a process chamber. Further, the method comprises exposing the substrate to a high pressure plasma in the process chamber.

REFERENCES:
patent: 5180435 (1993-01-01), Markunas et al.
patent: 5851600 (1998-12-01), Horiike et al.
patent: 6331701 (2001-12-01), Chen et al.
patent: 2006/0065367 (2006-03-01), Chen et al.

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