Method for plasma etching of a perovskite oxide thin film

Details Method for plasma etching of a perovskite oxide thin film Method for plasma etching of a perovskite oxide thin film

1996-07-01

1998-12-15

McCamish, Marion E.

Etching a substrate: processes

Gas phase etching of substrate

Etching inorganic substrate

216 67, 216 74, 216 75, 438722, 438715, 438710, C23F 112

Patent

active

058492070

ABSTRACT:
A method for the plasma etching of a ferrodielectric perovskite oxide thin film such as PZT which comprises providing a resist pattern from on a perovskite oxide thin film as an etching mask, and subjecting the thin film to plasma etching using an etching gas which includes a compound having at least carboxyl group in the molecule, so that the carbonyl group formed by dissociation of the compound having at least carboxyl group in the molecule reacts with constituent metals of the perovskite oxide to efficiently form a reaction product in the form of a metal complex, enabling one to effect plasma etching at a practical etching rate while ensuring good anisotropic processing.

REFERENCES:
patent: 5262001 (1993-11-01), Takehara

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