Method for plasma etching a wafer after backside grinding

Details Method for plasma etching a wafer after backside grinding Method for plasma etching a wafer after backside grinding

2005-05-03

2005-05-03

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S691000, C438S692000, C438S710000, C438S745000

Reexamination Certificate

active

06887793

ABSTRACT:
A method for plasma etching a wafer after a backside grinding process which incorporates an oxidation pretreatment step is disclosed. The method includes the step of first grinding a backside of a wafer to expose a bare silicon surface. The bare silicon surface is then oxidized in an oxidation chamber to form a substantially uniform silicon oxide layer of at least 50 Å thick, and preferably at least 100 Å thick. The wafer is then positioned in a plasma etch chamber with an active surface of the wafer exposed, and a surface layer etched away by an oxygen plasma without causing any further silicon oxide formation on the backside of the wafer. The present invention novel plasma etching method can be advantageously used for removing an organic material layer, such as a photoresist layer from a wafer surface.

REFERENCES:
patent: 5278102 (1994-01-01), Horie
patent: 5780311 (1998-07-01), Beasom et al.
patent: 6231775 (2001-05-01), Levenson et al.
patent: 6537926 (2003-03-01), Schrems et al.

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