Method for planarizing wide bandgap semiconductor devices

Details Method for planarizing wide bandgap semiconductor devices Method for planarizing wide bandgap semiconductor devices

1997-05-09

1998-08-18

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

257 77, 257623, 257626, 257644, 257510, H01L 2912

Patent

active

057961220

ABSTRACT:
A method of planarizing wide bandgap semiconductor devices selected from a group including SiC, GaN and diamond having a mesa defined thereon by a trench with a depth of 1 to 2 micrometers and a width of 2 to 10 micrometers. A layer of dielectric material is deposited on the substrate overlying and surrounding the mesa, to a height approximately equal to the height of the mesa and the dielectric material is etched from atop the mesa and from a surrounding area. Layers of spin on glass are deposited to fill the surrounding area and etched to achieve a planar surface including the mesa and the layer of dielectric material.

REFERENCES:
patent: 5385855 (1995-01-01), Brown et al.
patent: 5440166 (1995-08-01), Dixit et al.

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