Method for planarizing thin layer of semiconductor device

Details Method for planarizing thin layer of semiconductor device Method for planarizing thin layer of semiconductor device

2006-12-29

2009-10-27

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C257SE21214, C257SE21230, C257SE21304

Reexamination Certificate

active

07608543

ABSTRACT:
A method for planarizing a layer of a semiconductor device includes depositing a high density plasma (HDP) oxide layer over a wafer to have a reflective index distribution that is inversely proportional to a thickness distribution of the HDP oxide layer. A chemical mechanical polishing process is performed on the HDP oxide layer.

REFERENCES:
patent: 6749714 (2004-06-01), Ishikawa et al.
patent: 6997788 (2006-02-01), Wu et al.
patent: 2006/0083154 (2006-04-01), Nakatani et al.
patent: 2007/0048965 (2007-03-01), Hsieh et al.
patent: 2007/0178662 (2007-08-01), Chen et al.
patent: 1020040003649 (2004-01-01), None
patent: 2004-0106870 (2006-06-01), None

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