Method for planarizing a layer of material

Details Method for planarizing a layer of material Method for planarizing a layer of material

1992-12-07

1993-12-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437195, 437235, 156653, H01L 21465

Patent

active

052721175

ABSTRACT:
A method for forming a planarized layer of material starts by providing a substrate (12). An integrated circuit layer (14) is formed overlying the substrate (12). A first layer of material (16) is formed overlying the integrated circuit layer (14). An etch stop layer (18) is formed overlying the layer of material (16) and etched to form sidewall formations or spacers. A second layer of material (20) is formed overlying the layer of material (16) and the etch stop layer (18). Planarization, polishing, or etch-back processing is performed using the etch stop layer (18) to endpoint. The resulting planarized layer has a thickness which is determined accurately by the etch stop layer (18).

REFERENCES:
patent: 4676868 (1987-06-01), Riley et al.
patent: 4793895 (1988-12-01), Kaanta et al.
patent: 4944836 (1990-07-01), Beyer et al.
patent: 4966865 (1990-10-01), Welch et al.
patent: 5139962 (1992-08-01), Tanaka
patent: 5160986 (1992-11-01), Bellezza

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