Method for planarization

Details Method for planarization Method for planarization

1994-01-28

1995-07-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437235, 437228, 26427217, H01L 21463

Patent

active

054341078

ABSTRACT:
A method for planarization of the upper surface of a semiconductor wafer. A wafer with features formed thereon is loaded into the apparatus after having been coated with an interlevel dielectric. Thereafter, the wafer is subjected to suitably elevated temperature while a uniform elevated pressure is applied. Once the temperature and pressure conditions exceed the yield stress of the film, the film will flow and fill the microscopic as well as global depressions in the wafer surface. Thereafter, the temperature and pressure is reduced so that the film will become firm again thereby leaving a planar upper surface on the wafer.

REFERENCES:
patent: 4894706 (1990-01-01), Sato et al.
patent: 5073518 (1991-12-01), Doan et al.
patent: 5302233 (1994-04-01), Kim et al.
patent: 5308792 (1994-05-01), Okabayashi et al.
patent: 5326243 (1994-07-01), Fierkens
patent: 5348615 (1994-09-01), Gupta

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