Method for photoresist stripping using reverse flow

Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

134 19, 134 31, 134 37, 156640, 156662, 219390, 219405, 219411, B08B 500

Patent

active

050714856

ABSTRACT:
A method and apparatus for stripping a photoresist layer from a semiconductor wafer, wherein oxidizing gas is fed from the edge of the wafer to the center. The oxidizing gas may be directed so that it is incident on the heated wafer support platform before it is incident on the wafer.

REFERENCES:
patent: 4341592 (1982-07-01), Shortes et al.
patent: 4544446 (1985-10-01), Cady
patent: 4885047 (1989-12-01), Ury et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for photoresist stripping using reverse flow does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for photoresist stripping using reverse flow, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for photoresist stripping using reverse flow will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1038050

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.