Method for photoresist pretreatment prior to charged particle be

Details Method for photoresist pretreatment prior to charged particle be Method for photoresist pretreatment prior to charged particle be

1982-11-19

1989-07-25

Smith, Alfred E.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

437 20, 437928, 437931, H01J 37317

Patent

active

048516910

ABSTRACT:
A method for pretreatment of a photoresist layer adhered to a semiconductor wafer prior to charged particle beam processing. The method includes bombarding the photoresist layer with ions which are electrically inactive with respect to the wafer. Suitable ions include ions of the noble gases. The pretreatment method causes rapid photoresist outgassing and carbonization without altering the electrical properties of the wafer. Outgassing during subsequent processing is thereby reduced. The pretreatment method is particularly applicable to ion implantation wherein dose measurement errors resulting from photoresist outgassing are reduced. The pretreatment method is performed at high current to minimize the effect on system throughput.

REFERENCES:
patent: 3615875 (1971-10-01), Morita et al.
patent: 4011449 (1977-03-01), Ko et al.
patent: 4253888 (1981-03-01), Kikuchi
T. C. Smith, "Wafer Cooling and Photoresist Masking Problems in Ion Implantation," Fourth Int. Conf., Ion Implantation: Equipment and Techniques, Berchtesgaden, West Germany, Sep. 13-17, 1982.
Wilson and Brewer, "Ion Beams with Applications to Ion Implantation," R. Krieger Publishing Co., Huntington, New York, 1979, Reprint of J. Wiley, New York, 1973, pp. 276-278.

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