Method for photo annealing non-single crystalline semiconductor

Details Method for photo annealing non-single crystalline semiconductor Method for photo annealing non-single crystalline semiconductor

1992-08-24

1994-03-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 82, 437101, 437108, 437109, 437247, 437908, 437942, 148DIG1, 148DIG3, 148DIG4, 148DIG61, 148DIG90, 148DIG93, H01L 2120, H01L 21324

Patent

active

052964051

ABSTRACT:
An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.

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