Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Patent
1997-07-10
2000-02-01
Arroyo, Teresa M.
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
438694, 438700, H01L 23544, H01L 2348
Patent
active
060202491
ABSTRACT:
A method for forming alignment marks are disclosed for performing photoalignment after chemical-mechanical polishing (CMP). A trench is first formed in a silicon substrate and then alignment marks are formed at the bottom of the trench. The aspect ratio of the trench is selected to be so low that the dishing of the CMP pad can be prevented from reaching into the trench to damage the alignment marks therein. A trench structure is also provided whereby the alignment marks can be protected from the abrasive action of the CMP. Steps subsequent to the CMP can therefore proceed unimpeded with the presence of undamaged alignment marks.
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Chang Jui-Yu
Jang Syun-Ming
Shih Tsu
Yu Chen-Hua
Ackerman Stephen B.
Arroyo Teresa M.
Saile George O.
Taiwan Semiconductor Manufacturing Company
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