Method for performing a shelf lifetime acceleration test

Measuring and testing – Inspecting

Reexamination Certificate

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Details

C073S086000, C073S865600, C073S866000

Reexamination Certificate

active

08061224

ABSTRACT:
Embodiments of the invention provide a method of determining a storage lifetime of a wafer in a storage environment, the storage environment corresponding to an environment having a first value of temperature and a first value of relative humidity, the wafer having a pre-test value of a first contamination parameter, including the steps of: subjecting the wafer to a test environment for a test period, the test environment includes an environment having a second value of temperature and a second value of relative humidity; subsequently, inspecting the wafer thereby to determine a post-test value of a second contamination parameter, wherein the second value of relative humidity is greater than 30% and the second value of wafer temperature is greater than 30° C.

REFERENCES:
patent: 3304594 (1967-02-01), Madland
patent: 4091919 (1978-05-01), MacLeod et al.
patent: 4171740 (1979-10-01), Clement et al.
patent: 5352328 (1994-10-01), Obeng et al.
patent: 5576223 (1996-11-01), Zeininger et al.
patent: 5930587 (1999-07-01), Ryan
patent: 6037097 (2000-03-01), Bucchignano et al.
patent: 6511923 (2003-01-01), Wang et al.
patent: 6775624 (2004-08-01), Storino
patent: 6969638 (2005-11-01), Estepa et al.
patent: 2003/0104223 (2003-06-01), Ferm et al.
patent: 2003/0194877 (2003-10-01), Yau et al.
patent: 2004/0082174 (2004-04-01), Shieh et al.
patent: 2006/0024974 (2006-02-01), Azuri et al.
patent: 2007/0093069 (2007-04-01), Tsai et al.
Picard et al., “Failure Mechanisms of Thin Silicon Tantalum Integrated Circuits (STIC) Resistors on Multi-Chip Modul (MCM)”, 31stAnnual Proceedings of the Reliability Physics Symposium, Mar. 1993.
John W. Osenbach, “Corrosion-Induced Degradation of Microelectronic Devices”, Semiconductor Science Technology, vol. 11, 1996, pp. 155-162.
Shive et al., “Investigating the Formation of Time-Dependent Haze on Stored Wafers”, Mico Magazine, Mar. 2001.
Soden et al., “W88 Integrated Circuit Shelf Life Program”, Sandia National Laboratories, Jan. 1998.

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