Method for performing a circuit edit through the back side of an

Details Method for performing a circuit edit through the back side of an Method for performing a circuit edit through the back side of an

1997-09-30

1999-05-18

Bowers, Charles

Semiconductor device manufacturing: process

Repair or restoration

438 14, 216 58, 216 59, H01L21/66

Patent

active

059044861

ABSTRACT:
A method and an apparatus for performing circuit edits through the back side of a flip-chip packaged integrated circuit die. In one embodiment, a circuit edit is achieved by exposing first and second circuit edit connection targets through a semiconductor substrate of the integrated circuit die from the back side. Next, an insulating layer is deposited over the first and second circuit edit connection targets and the exposed semiconductor substrate. Next, the circuit edit connection targets are re-exposed through the insulating layer and a conductor is deposited over the re-exposed circuit edit connection targets and the deposited insulating layer from the back side of the integrated circuit to couple together the circuit edit connection targets.

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Scott Silverman, "Laser Microchemical Technology Enables Real-Time editing of First Run Silicon," Solid State Technology p. 113, 1996.
Paul Winer, "IC Failure Analysis, E-Beam Tutorial," International Reliability and Physics Symposium, 1996.
Scott Silverman, "Laser Microchemical Technology Enables Real-Time Editing of First-Run Silicon," Solid State Technology, 1996.
Ann N. Campbell, Fault Localization with the Focused Ion Beam (FIB) System, in Microelectronic Failure Analysis, ASM International, 1996.

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