Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
2006-08-22
2006-08-22
Pert, Evan (Department: 2826)
Coating apparatus
Gas or vapor deposition
With treating means
Reexamination Certificate
active
07093559
ABSTRACT:
A process for PECVD of selected material films on a substrate comprising the steps of placing a substrate in a PECVD chamber and maintaining the chamber under vacuum pressure while introducing a precursor gas, a reactant gas, and an ionization enhancer agent into the chamber. A plasma is generated from the gases within the chamber. The energy generating the plasma causes the formation of charged species. The resulting charged species of the ionization enhancer agent assists in the formation of chemically reactive species of at least the precursor.
REFERENCES:
patent: 5855685 (1999-01-01), Tobe et al.
patent: 5946594 (1999-08-01), Iyer et al.
patent: 6051286 (2000-04-01), Zhao et al.
patent: 6090709 (2000-07-01), Kaloyeros et al.
patent: 6184136 (2001-02-01), Iyer et al.
patent: 6294466 (2001-09-01), Chang
patent: 0 483 669 (1992-04-01), None
patent: WO 97/19895 (1997-06-01), None
Nasser, Essam. Fundamentals of Gaseous Ionization and Plasma Electronics. 214-217 (1971).
Llewellyn-Jones, F. The Glow Discharge and an Introduction to Plasma Physics. 21-24. 152-154 (1966).
Muller and Kamins, “Device Electronics for Integrated Circuits”, John Wiley and Sons, p. 102.
Sandhu Gurtej S.
Sharan Sujit
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