Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-09-30
2000-06-06
Hiteshew, Felisa
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438710, 438720, 438742, H01L 2100
Patent
active
06071820&
ABSTRACT:
A method for forming integrated circuit conductors. The method includes the steps of placing in a reactive ion etching chamber a semiconductor body having disposed over a surface thereof: a metalization layer comprising an aluminum layer disposed between a pair of barrier metal layers; and, a photoresist layer disposed on a selected portion of a surface of an upper one of the pair of barrier layers. Radio frequency energy is inductively coupled into the chamber while silicon tetrachloride and chlorine are introduced into the chamber at rates selected to etch portions of the metalization layer exposed by the photoresist with aluminum having substantially vertical sidewalls. The silicon tetrachloride is introduced into the chamber at a rate in the range of 4 to 8 sccm. The rate of the chlorine is in the range of 50 sccm to 150 sccm. The chamber is at a pressure of about 12 milliTorr during the etching of the metalization layer. The chamber operates with an RF power of about 125 watts while the semiconductor is disposed on a platform in the chamber having an RF bias power level of about 250 watts during the etching.
REFERENCES:
patent: 4373990 (1983-02-01), Porter
patent: 4678540 (1987-07-01), Uchimura
patent: 5387556 (1995-02-01), Xiaobing et al.
Grewal Virinder
Spuler Bruno
Braden Stanton C.
Hiteshew Felisa
Siemens Aktiengesellschaft
Umez-Eronini Lynette T.
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