Method for patterning HfO2-containing dielectric

Details Method for patterning HfO2-containing dielectric Method for patterning HfO2-containing dielectric

2007-03-06

2007-03-06

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Altering etchability of substrate region by compositional or...

C438S149000, C438S424000, C438S754000, C438S756000, C438S785000, C438S906000, C134S001300

Reexamination Certificate

active

11160629

ABSTRACT:
A wafer has a trench, a STI layer formed in the trench, an HfO2-containing gate dielectric covering the wafer and the STI layer, a gate electrode formed on the HfO2-containing gate dielectric, and at least a spacer formed beside the gate electrode. The wafer is preheated and a bromine-rich gas plasma is provided to remove portions of the HfO2-containing gate dielectric.

REFERENCES:
patent: 6818516 (2004-11-01), Lo et al.
patent: 6919251 (2005-07-01), Rotondaro et al.
patent: 7045073 (2006-05-01), Hareland et al.
patent: 2005/0081781 (2005-04-01), Lin et al.
patent: 2005/0115925 (2005-06-01), Paraschiv et al.
patent: 2005/0118353 (2005-06-01), Chen et al.
patent: 2005/0164511 (2005-07-01), Chen et al.

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