Method for patterning electrically conducting poly(phenyl...

Details Method for patterning electrically conducting poly(phenyl... Method for patterning electrically conducting poly(phenyl...

2008-03-18

2008-03-18

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S104000, C438S597000, C438S637000, C438S636000, C257SE21613

Reexamination Certificate

active

07344912

ABSTRACT:
Disclosed are methods of fabricating a memory cell structure. More specifically, a copper substrate, including but not limited to copper contacts and/or bit lines, can be formed within a metal-containing layer, for example. Optionally, one or more via openings can then be formed in an overlying dielectric layer to expose one or more of the copper contacts and/or bit lines. Copper sulfide material can be formed thereon. Alternatively, a portion of the exposed copper can be converted to copper sulfide (e.g., Cu2S2or Cu2S). The copper sulfide material can then be exposed to a vapor phase monomer to facilitate selective growth of a conducting polymer.

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