Fishing – trapping – and vermin destroying
Patent
1991-03-08
1994-11-29
Hearn, Brian E.
Fishing, trapping, and vermin destroying
H01L 2144, H01L 2148
Patent
active
053690532
ABSTRACT:
A process for the fine replication of aluminum-based metallizations on semiconductor devices. A layer of material, such as silicon dioxide or oxynitride, that is resistant to the chlorine-based etchants that readily attack aluminum and aluminum alloys is deposited upon an aluminum-based metallization layer. A relatively thin layer of photoresist is deposited thereover and developed. Etchant gases attack the dielectric layer, creating a patterned hard mask for subsequent etching of the underlying metal.
REFERENCES:
patent: 3419761 (1968-12-01), Pennebaker
patent: 3477886 (1969-11-01), Ehlenberger
patent: 3917495 (1975-11-01), Horn
patent: 4087314 (1978-05-01), George et al.
patent: 4203800 (1980-05-01), Kitcher et al.
patent: 4256534 (1981-03-01), Levinstein et al.
patent: 4272308 (1981-06-01), Varshney
patent: 4350563 (1982-10-01), Takada et al.
patent: 4394406 (1983-07-01), Gardiner et al.
patent: 4397724 (1983-08-01), Moran
patent: 4398992 (1983-08-01), Fang et al.
patent: 4416952 (1983-11-01), Nishizawa et al.
patent: 4444618 (1984-04-01), Saia et al.
patent: 4462846 (1984-07-01), Varshney
patent: 4533429 (1985-08-01), Josquin
patent: 4577394 (1986-03-01), Peel
patent: 4631806 (1986-12-01), Poppert et al.
patent: 4639277 (1987-01-01), Hawkins
patent: 4680087 (1987-07-01), Bobbio
patent: 4717631 (1988-01-01), Kaganowicz et al.
patent: 4725560 (1988-02-01), Abernathey et al.
patent: 4729816 (1988-03-01), Nguyen et al.
patent: 4838992 (1989-06-01), Abraham
Translation of Irir Masahira (Iiri) et al. JP 56-122142.
S. Wolf and R. Tauber, Silicon Processing for the VLSI Era, Lattice Press, Sunset Beach (1986) pp. 555-556.
Abstract from INSPEC database of Mak et al., "Photo-patterning and Dry Etching of Al and Al alloy for VLSI CMOS Process" Proc. of the 6th Biennial Univ./Gov./Indus. Microelectronics Symposium, Jun. 1985 pp. 22-27.
Gurley Lynn A.
Hearn Brian E.
Hewlett--Packard Company
LandOfFree
Method for patterning aluminum metallizations does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for patterning aluminum metallizations, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for patterning aluminum metallizations will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-73868