Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2009-01-16
2011-11-01
Maldonado, Julio J (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S624000, C438S625000, C438S637000, C438S694000, C438S734000, C257SE21257, C257SE21579
Reexamination Certificate
active
08048811
ABSTRACT:
By forming a hardmask layer in combination with one or more cap layers, undue exposure of a sensitive dielectric material to resist stripping etch ambients may be reduced and integrity of the hardmask may also be maintained so that the trench etch process may be performed with a high degree of etch selectivity during the patterning of openings in a metallization layer of a semiconductor device.
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Boemmels Juergen
Feustel Frank
Werner Thomas
Advanced Micro Devices , Inc.
Maldonado Julio J
Williams Morgan & Amerson P.C.
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