Method for patterning a layer on oxide superconductor thin film

Details Method for patterning a layer on oxide superconductor thin film Method for patterning a layer on oxide superconductor thin film

1995-04-05

1998-11-24

Dang, Thi

Etching a substrate: processes

Nongaseous phase etching of substrate

Substrate is multilayered

216 99, 505190, 505410, 505728, H01L 2100

Patent

active

058402047

ABSTRACT:
A method for patterning an oxide superconductor thin film, comprising a step of forming a SiO.sub.2 layer on the oxide superconductor thin film, patterning the SiO.sub.2 layer so as to form the same pattern as that of the oxide superconductor thin film which will be patterned, etching the oxide superconductor thin film by using the patterned SiO.sub.2 layer as a mask, and removing the SiO.sub.2 layer by using a weak HF solution, a buffer solution including HF or a mixture including HF.

REFERENCES:
patent: 4933318 (1990-06-01), Heijman
patent: 5219830 (1993-06-01), Jeong et al.
Eidelloth, W., et al., "Wet Etch Process for Patterning Insulators Suitable for Epitaxial High T.sub.c Superconducting Thin Film Multilevel Electronic Circuits", Applied Physics Letters, vol. 59, No. 10, pp. 1257-1259, Sep. 1991.

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