Method for pattern formation

Details Method for pattern formation Method for pattern formation

2011-04-26

2011-04-26

Alanko, Anita K (Department: 1713)

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

C216S022000, C216S051000, C216S058000, C216S067000, C216S079000, C438S735000, C438S942000

Reexamination Certificate

active

07931819

ABSTRACT:
There is provided a method for pattern formation, including a step of coating a composition comprising a block copolymer, a silicon compound, and a solvent for dissolving these components onto an object to form a layer of the composition on the object, a step of subjecting the layer of the composition to self-organization of the block copolymer to cause phase separation into a first phase, in which the silicon compound is localized, having higher etching resistance by heat treatment or/and oxygen plasma treatment, and a second phase comprising a polymer phase and having lower etching resistance by heat treatment or/and oxygen plasma treatment, and thereby forming a pattern layer with a fine pattern, and a step of etching the object using as a mask the thus formed pattern layer.

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