Method for pattern defect correction of a photomask

Details Method for pattern defect correction of a photomask Method for pattern defect correction of a photomask

1992-11-17

1993-12-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437923, 156643, 2504922, 430 5, H01L 21465

Patent

active

052721167

ABSTRACT:
A pattern defect correction method of a photomask includes the steps of directing a focused ion beam to scan a small region including a pattern defect after a planarization film is formed on a region including a pattern defect of a phase shift mask to etch the small region. By monitoring a change in the intensity of a secondary signal, the end of an etching process is detected, followed by removal of the planarization film. According to this method, a pattern defect of a phase shift mask which is used in manufacturing an LSI can be corrected in high precision.

REFERENCES:
patent: Re33193 (1990-04-01), Yamaguchi et al.
patent: 4548883 (1985-10-01), Wagner et al.
patent: 4925755 (1990-05-01), Yamaguchi et al.
patent: 4933565 (1990-06-01), Yamaguchi et al.

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