Method for passivating the back channel of amorphous silicon fie

Details Method for passivating the back channel of amorphous silicon fie Method for passivating the back channel of amorphous silicon fie

1986-05-05

1987-11-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

156643, 148DIG1, 437101, 437233, H01L 2978

Patent

active

047047836

ABSTRACT:
An organic or inorganic base solution is employed as a means for passivating the back channel region of an amorphous silicon FET device following plasma etching of the back channel region. The passivation provided significantly reduces back channel leakage currents resulting in FET devices which are compatible with conventional processing methods and which exhibit desirable properties for use in liquid crystal display systems.

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patent: 4646424 (1987-03-01), Parks et al.
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